Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (7) , 1650-1654
- https://doi.org/10.1109/16.85162
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Increased junction breakdown voltages in silicon-on-insulator diodesIEEE Transactions on Electron Devices, 1989
- Silicon-to-silicon direct bonding methodJournal of Applied Physics, 1986
- Improved dielectrically isolated device integration by silicon-wafer direct bonding(SDB) techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- A process for simultaneous fabrication of vertical NPN and PNP's Nch, and Pch MOS devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970