Correlation between midgap interface state density and thickness-averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si
- 14 May 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (20) , 1983-1985
- https://doi.org/10.1063/1.103228
Abstract
Correlations between midgap interface state density (Dit) and thickness-averaged stress in thermally grown SiO2 thin films have been investigated by infrared spectroscopy, an optical beam deflection technique, and capacitance-voltage measurements. We find no correlations between Dit and either (i) the maximum stress in the Si or SiO2 at the Si/SiO2 interface or (ii) the stress gradient in the SiO2 film. By direct measurements of the strain-induced bending of the Si wafer, and by calculating the microscopic strain from the SiOSi bond-stretching vibrational frequency, we have established linear relationships between Dit and the thickness-averaged stress and strain in the oxide.Keywords
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