Graded compositional heterostructures in the GaAs/AlxGa1−xAs system

This publication has 7 references indexed in Scilit:

• Compositionally graded AlxGa1−xAs films for millimetre wave frequency conversion
  Thin Solid Films, 1988
• The atomic scale structure and the electronic properties of a graded composition semiconductor layer
  Journal of Applied Physics, 1988
• Electron beam source molecular beam epitaxial growth of analog graded AlxGa1−xAs ballistic transistors
  Applied Physics Letters, 1988
• MBE growth and energy levels of quantum wells with special shapes
  Surface Science, 1986
• Nonrectangular quantum wells as a basis for studying the band offsets at GaAs-${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$ As interfaces
  Physical Review B, 1985
• Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conduction
  Journal of Vacuum Science and Technology, 1982
• New rectifying semiconductor structure by molecular beam epitaxy
  Applied Physics Letters, 1980