New rectifying semiconductor structure by molecular beam epitaxy
- 1 March 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (5) , 373-376
- https://doi.org/10.1063/1.91492
Abstract
A new unipolar rectifying semiconductor structure is demonstrated. Rectification is produced by an asymmetric potential barrier created by an MBE‐grown sawtooth‐shaped composition wave of AlxGa1−xAs between layers of n‐type GaAs. Single and multiple barriers as well as doped and undoped barriers have been studied and showed rectification. This is the first structure in which rectification has been produced directly by compositional grading.Keywords
This publication has 8 references indexed in Scilit:
- A majority-carrier camel diodeApplied Physics Letters, 1979
- Recent developments in molecular beam epitaxy (MBE)Journal of Vacuum Science and Technology, 1979
- Coupled-line circuit with adjustable input conductanceElectronics Letters, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Integrated multijunction GaAs photodetector with high output voltageApplied Physics Letters, 1978
- Epitaxial structures with alternate-atomic-layer composition modulationApplied Physics Letters, 1976
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974