Photothermal deflection spectroscopy study of defects in semi-insulating GaAs
- 1 February 1991
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 52 (2) , 112-114
- https://doi.org/10.1007/bf00323725
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Sub-gap absorption study of defects in ion-implanted and annealed Si layersApplied Physics A, 1990
- Subgap absorption spectra of ion-implanted Si and GaAs layersApplied Physics Letters, 1989
- Investigation of surface passivation of amorphous silicon using photothermal deflection spectroscopyApplied Physics Letters, 1987
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Photothermal deflection spectroscopy and detectionApplied Optics, 1981
- Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:SnJournal of Applied Physics, 1980
- Sensitive photothermal deflection technique for measuring absorption in optically thin mediaOptics Letters, 1980
- Thermo-optical spectroscopy: Detection by the ’’mirage effect’’Applied Physics Letters, 1980
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Absorption of Light by Atoms in SolidsPhysical Review B, 1956