Self-Aligned Organic Field-Effect Transistors Using Back-Surface Exposure Method
- 1 April 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (4S) , 2323
- https://doi.org/10.1143/jjap.43.2323
Abstract
Self-aligned organic field-effect transistors using the back-surface exposure method were investigated. Using the back-surface exposure method, source and drain electrodes were self-aligned to the gate electrode. The overlapping length of the gate-source and the gate-drain electrodes was as small as 0.8 µm. Excellent field-effect operation was obtained with small parasitic resistance, where the maximum field-effect mobility was 0.12 cm2/Vs. The on-off ratio was 104, threshold voltage was -1.0 V, mutual conductance was 1.8 mS and subthreshold slope was 0.5 V/decade. Combined with capacitance measurement, the estimated cutoff frequency was 0.18 MHz.Keywords
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