Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect

This publication has 9 references indexed in Scilit:

• High-power and wide wavelength range GaN-based laser diodes
  Published by SPIE-Intl Soc Optical Eng ,2006
• Confocal microphotoluminescence of InGaN-based light-emitting diodes
  Journal of Applied Physics, 2005
• Optically pumped lasing and gain formation properties in blue In_x Ga_1–x N MQWs
  Physica Status Solidi (b), 2004
• Microstructure and electronic properties of InGaN alloys
  Physica Status Solidi (b), 2003
• Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters
  Applied Physics Letters, 2003
• Estimation of Device Properties in AlGaInN-Based Laser Diodes by Time-Resolved Photoluminescence
  Physica Status Solidi (a), 2001
• Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm
  Applied Physics Letters, 2001
• Dimensionality of excitons in laser-diode structures composed ofInxGa1−xNmultiple quantum wells
  Physical Review B, 1999
• Reduction of oscillator strength due to piezoelectric fields in ${\mathrm{G}\mathrm{a}\mathrm{N}/\mathrm{A}\mathrm{l}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ quantum wells
  Physical Review B, 1998