Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium
- 1 May 1999
- journal article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 79 (5) , 1145-1154
- https://doi.org/10.1080/01418619908210352
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Thermal properties of indium nitrideJournal of Physics and Chemistry of Solids, 1998
- Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materialsSemiconductor Science and Technology, 1997
- Novel single source precursors for MOCVD of AlN, GaN and InNJournal of Crystal Growth, 1997
- Second‐Order Pretransitional Effects in the High Pressure Phase Transition of Indium NitridePhysica Status Solidi (b), 1996
- Thermal expansion of gallium nitrideJournal of Applied Physics, 1994
- Crystal growth of III-N compounds under high nitrogen pressurePhysica B: Condensed Matter, 1993
- Preparation and properties of III-V nitride thin filmsJournal of Applied Physics, 1989
- Thermal stability of indium nitride at elevated temperatures and nitrogen pressuresMaterials Research Bulletin, 1970
- Untersuchungen über die Nitride von Cadmium, Gallium, Indium und Germanium. Metallamide und Metallnitride. VIII. MitteilungZeitschrift für anorganische und allgemeine Chemie, 1940
- Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und MetallnitrideZeitschrift für anorganische und allgemeine Chemie, 1938