Thermal properties of indium nitride
- 1 March 1998
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 59 (3) , 289-295
- https://doi.org/10.1016/s0022-3697(97)00222-9
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- III–V Nitrides—thermodynamics and crystal growth at high N2 pressureJournal of Physics and Chemistry of Solids, 1995
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- Pressure dependence of the electronic properties of cubic III-V In compoundsPhysical Review B, 1990
- The spectral p-n junction model for tandem solar-cell designIEEE Transactions on Electron Devices, 1987
- Thermal stability of InNJournal of Physics and Chemistry of Solids, 1987
- The intrinsic thermal conductivity of AINJournal of Physics and Chemistry of Solids, 1987
- Thermal stability of indium nitride at elevated temperatures and nitrogen pressuresMaterials Research Bulletin, 1970
- Untersuchungen über die Nitride von Cadmium, Gallium, Indium und Germanium. Metallamide und Metallnitride. VIII. MitteilungZeitschrift für anorganische und allgemeine Chemie, 1940