A New Approach to Grow Polycrystalline CuGaSe2 Thin Films: Chemical Vapor Deposition with I2 as Transport Agent
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S) , 1617
- https://doi.org/10.1143/jjap.37.1617
Abstract
Polycrystalline CuGaSe2 thin films have been prepared onto glass by a chemical vapor deposition (CVD) method which uses iodine as the transport agent. The source material was a polycrystalline CuGaSe2 powder which was pressed into pellets. Single phase CuGaSe2 films were prepared in a temperature range from 460°C to 560°C and had grain sizes between 0.5 and 5 µm. Thermochemical calculations were performed for the system under equilibrium conditions to model the deposition process. The necessary values for the heat of formation H 298 and the standard entropy S 298 for CuGaSe2 were estimated to be H 298=-251 kJ/mol and S 298=155 J/K mol. The calculations are in good agreement with the experimental observations.Keywords
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