Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance
- 1 January 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Circuits, Devices and Systems
- Vol. 150 (4) , 309-315
- https://doi.org/10.1049/ip-cds:20030578
Abstract
A review of recombination in silicon thin-film solar cells studied by means of electrically detected magnetic resonance (EDMR) is presented. It is shown that the EDMR results in μc-Si:H p-i-n solar cells can be described by a simple diffusion model that was developed for crystalline silicon p-n junctions assuming that recombination is dominated by dangling bonds in the space charge region. The results are compared to a-Si:H p-i-n cells and discussed in a recombination model involving the excited states of charged dangling bonds.Keywords
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