Silicon molecular beam epitaxy on arsenic-implanted and laser-processed silicon
- 1 January 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (1) , 64-66
- https://doi.org/10.1063/1.92926
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Shallow implanted layers in advanced silicon devicesNuclear Instruments and Methods, 1981
- Preparation of atomically clean silicon surfaces by pulsed laser irradiationApplied Physics Letters, 1980
- Application of Si MBE to microwave hyperabrupt diodesIEEE Transactions on Electron Devices, 1979