Interpretation of anomalous layers at GaAs n+−n− step junctions
- 15 August 1970
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 8 (16) , 1313-1315
- https://doi.org/10.1016/0038-1098(70)90628-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A Thin GaAs N on N+ Epitaxial Film with Abrupt Interface in Carrier Concentration ProfileJapanese Journal of Applied Physics, 1970
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969
- Effect of Nonuniform Conductivity on the Behavior of Gunn Effect SamplesJournal of Applied Physics, 1968
- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962