Investigation of silicon carbide single crystals doped with scandium
- 16 September 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 25 (1) , 349-357
- https://doi.org/10.1002/pssa.2210250134
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Growth of silicon carbide crystals by vapour-liquid-solid (VLS) mechanism in the sublimation methodJournal of Crystal Growth, 1973
- The present state of structural stability and the growth of silicon carbide polytypesPhysica Status Solidi (a), 1973
- Optical absorption associated with superlattice in silicon carbide crystalsPhysica Status Solidi (b), 1973
- Coordination and volume changes accompanying high-pressure phase transformations of oxidesMaterials Research Bulletin, 1969
- Determination of the Parameters of Sensitizing Recombination Centres in CdS and CdSe Single Crystals by Temperature and Optical Quenching of PhotocurrentsPhysica Status Solidi (b), 1965