Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers
- 2 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 229 (1-3) , 60-62
- https://doi.org/10.1016/0039-6028(90)90833-t
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Experimental Correlation between Diagonal and Hall Conductivities of Silicon MOS inversion Layers in Strong Magnetic FieldsJournal of the Physics Society Japan, 1989
- Experiments on Delocalization and University in the Integral Quantum Hall EffectPhysical Review Letters, 1988
- Universal Singularities in the Integral Quantum Hall EffectPhysical Review Letters, 1988
- Finite-Size Scaling Study of Localization in Landau LevelsJournal of the Physics Society Japan, 1985
- Hall Current Measurement under Strong Magnetic Fields for Silicon MOS Inversion LayersJournal of the Physics Society Japan, 1980
- Quantum galvanomagnetic properties of n-type inversion layers on Si(100) MOSFETSurface Science, 1976