ac electron tunneling at infrared frequencies: Thin-film M-O-M diode structure with broad-band characteristics
- 15 March 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (6) , 275-279
- https://doi.org/10.1063/1.1655181
Abstract
A high‐speed diode element consisting of a metal‐metal‐oxide‐metal electron‐tunneling junction is formed by thin films deposited on a substrate. These junctions are integrated with deposited narrow resonant antenna structures which couple the junction to incident radiation. Broad‐band characteristics from radio and microwave frequencies to the infrared region are shown. Frequency mixing and the possibility of utilizing large numbers of elements simultaneously are also demonstrated.Keywords
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