Changes in the Properties of Semiconductors Due to Bombardment with Fast Electrons, Gamma Rays, Neutrons, and Heavy Charged Particles
- 1 January 1965
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 44 references indexed in Scilit:
- Infrared Absorption and Photoconductivity in Irradiated SiliconJournal of Applied Physics, 1959
- Low-Temperature Annealing Studies in GeJournal of Applied Physics, 1959
- Electron Bombardment of SiliconPhysical Review B, 1959
- Surface Effects in Electron-Irradiated Ge at 80°KPhysical Review B, 1958
- Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage ThresholdsPhysical Review B, 1958
- Discrete Recovery Spectrum below 65°K in Irradiated CopperPhysical Review B, 1958
- Effects of Gamma Radiation on GermaniumPhysical Review B, 1956
- Theory of the Galvanomagnetic Effects in GermaniumPhysical Review B, 1954
- The Adiabatic Hall Effect in SemiconductorsPhysical Review B, 1953
- Experiments on the Elastic Single Scattering of Electrons by NucleiPhysical Review B, 1946