Identification of dislocation etch pits in n-type GaAs by NIR transmission microscopy
- 1 October 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 114 (1-2) , 255-257
- https://doi.org/10.1016/0022-0248(91)90699-6
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutionsJournal of Crystal Growth, 1983
- A review of etching and defect characterisation of gallium arsenide substrate materialThin Solid Films, 1976
- Etch pits and dislocations in {100} GaAs wafersJournal of Applied Physics, 1975
- Etch-Pit Observations Concerning Twins in Iron and Iron AlloysJournal of Applied Physics, 1964