Etch pits and dislocations in {100} GaAs wafers
- 1 May 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (5) , 2315-2316
- https://doi.org/10.1063/1.321833
Abstract
The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x‐ray topography. It is found to be a ’’faithful’’ etch.This publication has 11 references indexed in Scilit:
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