A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound Semiconductors
- 1 May 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (5A) , L287-288
- https://doi.org/10.1143/jjap.22.l287
Abstract
A newly developed Au–Si–Be liquid metal ion source has been incorporated to a 100 kV focused ion beam system. Among several ion species emitted from the single ion emitter, doubly ionized Si and Be have been selected by the crossed electric and magnetic field (E×B) mass separator and have been formed into a finely focused beam. This new system was found capable of focusing those ions down to a diameter of about 0.1 µm. It has also been found that, using the fine focusing for n- and p-doping, desired ion species (Si++ and Be++) can be exchanged simply by adjusting the electric field of the E×B mass separator.Keywords
This publication has 4 references indexed in Scilit:
- Au–Si–Be Liquid Metal Ion Source for Maskless Ion ImplantationJapanese Journal of Applied Physics, 1983
- A mass-separating focused-ion-beam system for maskless ion implantationJournal of Vacuum Science and Technology, 1981
- FET fabrication using maskless ion implantationJournal of Vacuum Science and Technology, 1981
- Field-emission liquid-metal ion source and triode ion gunJournal of Applied Physics, 1981