Radiation damaging behaviour of GaP by MeV ion implantation
- 1 February 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 64 (1-4) , 203-209
- https://doi.org/10.1016/0168-583x(92)95466-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Proton Beam Modification of Selected AIIIBVCompoundsPhysica Status Solidi (a), 1991
- MeV Be implantation in GaAsJournal of Applied Physics, 1990
- Buried dopant and defect layers for device structures with high-energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- The effect of hydrogen implantation induced stress on GaP single crystalsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Investigations of Hydrogen Implanted GaP Single Crystals by Means of Particle Induced γ-Spectroseopy, Infrared Spectroscopy, and Rutherford Backscattering Channelling TechniquePhysica Status Solidi (a), 1985
- High energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Optical and channeling studies of ion-bombarded GaPJournal of Applied Physics, 1974
- Analysis of disorder distributions in boron implanted siliconRadiation Effects, 1970
- Integrated E and dE/dχ semiconductor particle detectors made by ion implantationNuclear Instruments and Methods, 1969
- The Displacement of Atoms in Solids by RadiationReports on Progress in Physics, 1955