Buried dopant and defect layers for device structures with high-energy ion implantation

This publication has 10 references indexed in Scilit:

• Proximity gettering with mega-electron-volt carbon and oxygen implantations
  Applied Physics Letters, 1988
• Latchup performance of retrograde and conventional n-well CMOS technologies
  IEEE Transactions on Electron Devices, 1987
• Profile studies of MeV ions implanted into Si
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• MeV-energy B+, P+ and As+ ion implantation into Si
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Effects of high energy boron ions implanted in MOSFETs
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Programming of ROMs after metal definition using MEV ion implantation
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• The inverse-narrow-width effect
  IEEE Electron Device Letters, 1986
• The crystalline to amorphous transformation in silicon
  Nuclear Instruments and Methods in Physics Research, 1983
• Megavolt arsenic implantation into silicon
  Thin Solid Films, 1982
• On interstitial dislocation loops in aluminium bombarded with alpha-particles
  Philosophical Magazine, 1962