Profile studies of MeV ions implanted into Si
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1-4) , 447-451
- https://doi.org/10.1016/0168-583x(87)90875-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Precise Profiles for Arsenic Implanted in Si and SiO2 over a Wide Implantation Energy Range (10 keV–2.56 MeV)Japanese Journal of Applied Physics, 1982
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Range of implanted boron, phosphorus, and arsenic in siliconCanadian Journal of Physics, 1969