Precise Profiles for Arsenic Implanted in Si and SiO2 over a Wide Implantation Energy Range (10 keV–2.56 MeV)

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Abstract
Arsenic ions were implanted into Si and SiO2 over a wide energy range (10 keV–2.56 MeV). Implantation profiles were precisely measured by the normal and glancing angle Rutherford backscattering method. They are closely approximated by joined half-Gaussian distributions. For Si, the experimental R p and Δ R p values are systematically ∼15% and ∼30% larger than the LSS calculation values over the present full implantation energy range of 10 keV–2.56 MeV. For SiO2 the experimental R p and Δ R p values are systematically 20–30% and 40–50% larger over the same implantation energy range. The experimental third-moment, µp, is positive below ∼500 keV, and is negative above ∼500 keV implantation energy, for both Si and SiO2.