Effects of high energy boron ions implanted in MOSFETs
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1) , 134-141
- https://doi.org/10.1016/0168-583x(87)90812-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Analytical solutions for threshold voltage calculations in ion-implanted IGFETsSolid-State Electronics, 1983
- Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFETIEEE Transactions on Electron Devices, 1979
- Solid-phase transport and epitaxial growth of Ge and SiApplied Physics Letters, 1974
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972