Solid-phase transport and epitaxial growth of Ge and Si
- 1 July 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (1) , 3-5
- https://doi.org/10.1063/1.1655265
Abstract
Epitaxial growth of a semiconductor film from solid solution by dissolution and transport of an evaporated semiconductor layer through a metal film has been demonstrated. A Ge growth layer of 4800 Å has been obtained by heating the system bulk‐Ge/Al/evaporated‐Ge at 300 °C. Electrical measurements indicate that the layers are heavily doped p type. A silicon growth of 2000 Å has been obtained by heating the system bulk‐Si/Pd/evaporated‐Si at 600 °C. Channeling measurements show that the Ge and Si layers are well ordered and epitaxial with the underlying substrate.Keywords
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