Crystallization of evaporated Si/Ag and Ge/Al films

This publication has 10 references indexed in Scilit:

• Solid-phase epitaxial growth of Ge layers
  Physica Status Solidi (a), 1972
• Microanalysis of Materials by Backscattering Spectrometry
  Science, 1972
• Formation of silicon oxide over gold layers on silicon substrates
  Journal of Applied Physics, 1972
• Metal contact induced crystallization in films of amorphous silicon and germanium
  Journal of Non-Crystalline Solids, 1972
• Solid-Phase Growth of Ge from Evaporated Al Layer
  Applied Physics Letters, 1972
• Precipitation of Si from the Al Metallization of Integrated Circuits
  Applied Physics Letters, 1972
• Low-temperature migration of silicon through metal films importance of silicon-;metal interface
  Physica Status Solidi (a), 1971
• The influence of contact materials on the conduction crystallization temperature and electrical properties of amorphous germanium, silicon and boron films
  Thin Solid Films, 1970
• A high density form of amorphous Ge
  Physics Letters A, 1970
• Effect of Deposited Metals on the Crystallization Temperature of Amorphous Germanium Film
  Japanese Journal of Applied Physics, 1969