Analytical solutions for threshold voltage calculations in ion-implanted IGFETs
- 31 August 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (8) , 761-766
- https://doi.org/10.1016/0038-1101(83)90039-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- An accurate model for a depletion mode IGFET used as a load deviceSolid-State Electronics, 1978
- Ion-implanted threshold tailoring for insulated gate field-effect transistorsIEEE Transactions on Electron Devices, 1977
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974
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- Shift of the Gate Threshold Voltage of MOS Transistors dne to the Introduction of Shallow ImpuritiesJapanese Journal of Applied Physics, 1971