Short-channel MOST threshold voltage model
- 1 October 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (5) , 937-948
- https://doi.org/10.1109/jssc.1982.1051843
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Invited: Circuit scaling limits for ultra-large-scale integrationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Performance limits of E/D NMOS VLSIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- A simple current model for short-channel IGFET and its application to circuit simulationIEEE Transactions on Electron Devices, 1979
- Device characteristics of short-channel and narrow-width MOSFET'sIEEE Transactions on Electron Devices, 1978
- Subthreshold conduction in MOSFET'sIEEE Transactions on Electron Devices, 1978
- A simple approach for accurately modeling the threshold voltage of short-channel mostsSolid-State Electronics, 1977
- Geometrical factors in avalanche punchthrough eraseIEEE Transactions on Electron Devices, 1977
- Ion Implanted MOS TransistorsPublished by Springer Nature ,1977
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974
- An analysis of the threshold voltage for short-channel IGFET'sSolid-State Electronics, 1973