Performance limits of E/D NMOS VLSI
- 1 January 1980
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Characteristics and limitation of scaled-down MOSFET's due to two-dimensional field effectIEEE Transactions on Electron Devices, 1979
- Hot-electron emission in N-channel IGFET'sIEEE Transactions on Electron Devices, 1979
- Simple analytical models for the temperature dependent threshold behavior of depletion-mode devicesIEEE Transactions on Electron Devices, 1979
- A simplified model for subpinchoff conduction in depletion-mode IGFET'sIEEE Transactions on Electron Devices, 1978
- Simple model for threshold voltage in a short-channel IGFETIEEE Transactions on Electron Devices, 1977
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972