Threshold shift calculations for ion implanted MOS devices
- 1 December 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (12) , 1319-1326
- https://doi.org/10.1016/0038-1101(72)90124-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATIONApplied Physics Letters, 1971
- Shift of the Gate Threshold Voltage of MOS Transistors dne to the Introduction of Shallow ImpuritiesJapanese Journal of Applied Physics, 1971
- The influence of non-uniformly doped substrates on mos C-V curvesSolid-State Electronics, 1970
- Solution of Poisson's Equation Appropriate for Semiconductors with Nonconstant Impurity ProfilesJournal of Applied Physics, 1970
- Semiconductor Doping by High Energy 1–2.5 Mev Ion ImplantationJournal of the Electrochemical Society, 1968
- Surface charge and surface potential in arbitrarily doped crystalsSolid-State Electronics, 1963