Shift of the Gate Threshold Voltage of MOS Transistors dne to the Introduction of Shallow Impurities
- 1 January 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (1) , 84-91
- https://doi.org/10.1143/jjap.10.84
Abstract
It is possible to shift the gate threshold voltage of MOS transistors with little sacrifice of other device performances by introducing shallow level impurities only into a region near the semiconductor surface under the gate. Some theoretical information is given which may be useful for designing MOS transistors in an attempt to realize such a shift. The effects of the impurity introduction on the characteristics of MOS diode structures are also described.Keywords
This publication has 7 references indexed in Scilit:
- MOS-FET fabrication problemsSolid-State Electronics, 1969
- Effects of Interface States on the Characteristics of MOS TransistorsJapanese Journal of Applied Physics, 1968
- Solid-Solid Diffusion of Boron in Silicon Using Reactive SputteringJapanese Journal of Applied Physics, 1968
- Large-capacity semiconductor memoryProceedings of the IEEE, 1968
- The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1966
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965
- Surface charge and surface potential in arbitrarily doped crystalsSolid-State Electronics, 1963