Solid-Solid Diffusion of Boron in Silicon Using Reactive Sputtering

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Abstract
An investigation on the solid-solid diffusion of boron into silicon from doped oxide layer deposited by the reactive sputtering method is reported here. The surface concentrations are controlled over a wide range of low concentrations of from 1015 atoms cm-3 to 1017 atoms cm-3 and are almost independent of the diffusion temperatures and diffusion times. The diffusion profile obeys mostly the complementary error function and the diffusion coefficient obtained is expressed as D=0.15exp (-4.25(eV)/k T) cm2 sec-1 at a concentration of about 1016 atoms cm-3 over a range of temperature of 1100°C to 1270°C. This value is smaller than those observed at high concentrations. Furthermore the surface concentrations depend linearly on the target concentrations.

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