An accurate model for a depletion mode IGFET used as a load device
- 1 May 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (5) , 711-714
- https://doi.org/10.1016/0038-1101(78)90002-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Charge capacity analysis of the charge-coupled RAM cellIEEE Journal of Solid-State Circuits, 1976
- The charge-coupled RAM cell conceptIEEE Transactions on Electron Devices, 1976
- Modeling of an ion-implanted silicon-gate depletion-mode IGFETIEEE Transactions on Electron Devices, 1975
- Ion implantation for threshold control in COSMOS circuitsIEEE Transactions on Electron Devices, 1974
- Depletion-mode IGFET made by deep ion implantationIEEE Transactions on Electron Devices, 1973
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968