The inverse-narrow-width effect
- 1 July 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (7) , 419-421
- https://doi.org/10.1109/edl.1986.26422
Abstract
For the first time an analytical expression can simulate the inverse-narrow-width effect. The inverse-narrow-width effect is a reduction in the threshold voltage of a MOSFET with decreasing channel width. We compare the model with experimental threshold voltage data from small-geometry PMOS devices with fully recessed isolation oxides and an inverse-narrow-width effect is predicted.Keywords
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