Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor-Grown p-n Junctions
- 1 June 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (11) , 431-434
- https://doi.org/10.1063/1.1654004
Abstract
In1−xGaxP laser diodes which emit coherently at 80 °K at wavelengths as short as 6105 Å with threshold current densities of 4000–6000 A/cm2 have been fabricated from vapor‐grown In1−xGaxP p‐n junction structures. This is the shortest‐wavelength laser emission and the first example of coherent orange emission yet reported from a semiconductor p‐n junction. From vapor‐grown In1−xGaxP spontaneous‐light‐emitting diodes, external quantum efficiencies in excess of 0.1% have been obtained for orange and red emission at room temperature.Keywords
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