370 °C clean for Si molecular beam epitaxy using a HF dip
- 5 August 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6) , 685-687
- https://doi.org/10.1063/1.105365
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Coupling of an adsorbate vibration to a substrate surface phonon: H on Si(111)Physical Review Letters, 1990
- Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxyThin Solid Films, 1989
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Silicon Surface Passivation for Heteroepitaxy by Hydrogen TerminationMRS Proceedings, 1989
- Boron heavy doping for Si molecular beam epitaxy using a HBO2 sourceApplied Physics Letters, 1987
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Adsorption of atomic hydrogen on clean cleaved silicon (111)Surface Science, 1983
- Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2HJapanese Journal of Applied Physics, 1982
- Defect Etch for Silicon EvaluationJournal of the Electrochemical Society, 1979