Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2H

1 May 1982

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 21 (5A) , L263-265
https://doi.org/10.1143/jjap.21.l263

Abstract

We identified the monohydride phase Si(001)2×1:H and the dihydride phase Si(001)1×1: :2H by angle resolved electron energy loss profiles and I–V curves of 00-beam. For the 2×1:H-saturated surfaces, S₃ transition from back bond surface state was observed although S₁ transition from dangling bond surface state disappeared. For the 1×1: :2H surface, S₂ and S₃ transitions from back bond surface states completely disappeared but S₁ transition was observed. We clearly distinguished hydrogen induced loss peaks for the two surfaces: the peaks were at 8 eV for the 2×1:H surface and at 7 eV for the 1×1: :2H surface.

Keywords

LOW ENERGY ELECTRON DIFFRACTION

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