Growth of tungsten single-crystal films deposited on MgO(100) substrate
- 1 December 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (12) , 7208-7211
- https://doi.org/10.1063/1.328745
Abstract
The growth of tungsten single-crystal films on MgO(100) substrate has been achieved by means of the newly developed ’’ultrahigh vacuum arc evaporation’’ method. The necessary conditions for the growth were found through the so-called ’’design of experiments’’ method. From the experimental results, the levels of effective factors for single-crystal growth are discussed. Epitaxy temperatures were observed starting from about 250 °C, which is a relatively low temperature in spite of the high melting point of tungsten.This publication has 4 references indexed in Scilit:
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