Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5 GPa
- 17 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (20) , 2459-2461
- https://doi.org/10.1063/1.109318
Abstract
Pressure dependent measurements of the threshold current, differential quantum efficiency, and lasing wavelength of a ∼1.3 μm bulk InGaAsP semiconductor laser performed in a diamond anvil cell up to 1.5 GPa are reported. Results show a 40% decrease in the threshold current and a simultaneous enhancement in the differential quantum efficiency of approximately 350%. Large wavelength tunability of 140 nm is observed in this pressure range at room temperature. Calculations indicate that a reduction of the Auger recombination rate is likely to be the dominant loss mechanism responsible for the observed changes in the laser threshold current in this pressure range.Keywords
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