Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission
- 20 June 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (25) , 2124-2126
- https://doi.org/10.1063/1.99554
Abstract
Stimulated emission, obtainable at high optical pumping levels, has been used to follow the pressure dependence of the Γ‐band gap of molecular beam epitaxial In0.53Ga0.47As on (001)InP. Hydrostatic pressure was generated using a diamond anvil cell, and all measurements were made at room temperature. The gap varies sublinearly with pressure for P≳10 kbar, having an initial slope of 12.44 meV/kbar. The deviation from a linear behavior is largely due to nonlinearities in the equation of state at higher pressures. The deformation potential (Ξd+ (1)/(3) Ξu−a) =−(7.79±0.4)eV, for the Γ‐band gap.Keywords
This publication has 20 references indexed in Scilit:
- A photoluminescence technique for characterizing the GaInAsP channeled substrate buried heterostructure wafer for lasing wavelengthJournal of Materials Research, 1988
- Electronic energy levels inAs/InP strained-layer superlatticesPhysical Review B, 1987
- Ultrahigh pressuresReview of Scientific Instruments, 1986
- A Pseudopotential Approach to the Structural and Thermodynamical Properties of III–V Ternary Semiconductor AlloysPhysica Status Solidi (b), 1985
- strained-layer superlattices: A proposal for useful, new electronic materialsPhysical Review B, 1983
- Ga0.47In0.53As: A ternary semiconductor for photodetector applicationsIEEE Journal of Quantum Electronics, 1980
- Pressure dependence of the direct absorption edge of InPPhysical Review B, 1980
- Recombination without k-selection rules in dense electron-hole plasmas in high-purity GaAs lasersApplied Physics Letters, 1974
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973
- Elastic Constants of Single-Crystal Indium PhosphideJournal of Applied Physics, 1966