A photoluminescence technique for characterizing the GaInAsP channeled substrate buried heterostructure wafer for lasing wavelength

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Abstract
A photoluminescence technique to characterize, for lasing wavelength, the channeled substrate buried heterostructure wafer grown for fabricating lasers for undersea transmission applications, is described. The technique consists of photopumping a piece from the as-grown wafer at 80 K to achieve lasing action and determining the lasing wavelength at 300 K after correcting for the temperature shift of the bandgap. By comparing the optically determined wavelength against the lasing wavelength measured on the device, the accuracy of the technique to predict wavelength is found to be ± 20 nm. The factors that limit the accuracy are discussed.