InGaAsP (1.3 μm) grown by liquid-phase epitaxy in the V groove of a channeled InP substrate: A photoluminescence study
- 1 July 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (1) , 372-375
- https://doi.org/10.1063/1.337657
Abstract
The photoluminescence characteristics of a 1.3-μm undoped n-type InGaAsP grown lattice matched by liquid-phase epitaxy in the V grooves of a channeled InP substrate are compared with that grown over a planar substrate. In the 5.5 K photoluminescence spectrum, for both types of growth the epitaxial layer exhibits two well-defined and sharp (FWHM∼7–8 meV) bands at 1.016 and 0.99 eV. Both peaks are assigned to band-edge luminescence arising from two different compositions in the epilayer, the 0.99-eV peak arising solely from a transient growth region present near the substrate–epi interface. It is found that the transient growth region can be enhanced in the V channels perhaps due to additional perturbations due to growth on nonplanar substrates.This publication has 14 references indexed in Scilit:
- Photoluminescence characterization of molecular beam epitaxy grown InxGa1−xAs(0.51<x<0.57)Journal of Vacuum Science & Technology B, 1985
- Liquid phase epitaxial growth of InGaAsP on grooved substratesJournal of Crystal Growth, 1984
- Channelled-substrate buried heterostructure InGaAsP/InP lasers with vapor phase epitaxial base structure and liquid phase epitaxial regrowthJournal of Applied Physics, 1984
- Photoluminescence identification of the C and Be acceptor levels in InPJournal of Electronic Materials, 1984
- Measurement of compositional inhomogeneity of liquid phase epitaxial InGaPAsApplied Physics Letters, 1983
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Miscibility gaps in quaternary III/V alloysJournal of Crystal Growth, 1982
- Growth initiation and cathodoluminescence irregularities in LPE AlGaAs layersJournal of Applied Physics, 1979
- Lattice vibrations of In1−xGaxAsyP1−y quaternary compoundsApplied Physics Letters, 1978
- Orientation effects in the LPE growth of GaInAsP quaternary alloysApplied Physics Letters, 1978