strained-layer superlattices: A proposal for useful, new electronic materials
- 15 April 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (8) , 5126-5128
- https://doi.org/10.1103/physrevb.27.5126
Abstract
Strained-layer superlattices grown from lattice-mismatched layers of InGaAs are proposed as useful electronic materials with tailorable electronic properties. The first study of the electronic properties of these structures has been carried out. Band-gap energies are calculated as a function of layer thicknesses and compositions. The results demonstrate for the first time that the lattice constant, band gap, and transport properties of ternary strained-layer superlattices can be independently varied. This new capability could permit InGaAs strained-layer superlattices to significantly broaden the range of applications associated with the InGaAs ternary compound.Keywords
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