Yb-doped InP grown by metalorganic vapor phase epitaxy using a beta-diketonate precursor
- 5 February 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (6) , 566-568
- https://doi.org/10.1063/1.102746
Abstract
Yb-doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta-diketonate. The doped layers were n type with carrier concentrations ranging from 0.6 to 17×1015 cm−3. The doped layers exhibited the characteristic Yb+3-4f photoluminescent emission at 1.23 eV. The low-temperature photoluminescence indicates the association of Yb with other centers to form complexes.Keywords
This publication has 10 references indexed in Scilit:
- InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(M e C p)3Applied Physics Letters, 1988
- Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Extremely sharp erbium-related intra-4f-shell photoluminescence of erbium-doped GaAs grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Yb-doped InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Electronic and optical properties of Fe-doped InP prepared by organometallic vapor-phase epitaxyJournal of Applied Physics, 1986
- Zeeman analysis of the ytterbium luminescence in indium phosphidePhysical Review B, 1985
- Ytterbium-doped InP light-emitting diode at 1.0 μmApplied Physics Letters, 1985
- Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAsJournal of Applied Physics, 1985
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983
- Volatile Metal ComplexesScience, 1978