Superconducting properties of Mo/Si multilayer films

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Abstract
Multilayered Mo/Si thin films have been prepared by dual rf‐magnetron sputtering technique, and the superconducting transition temperature Tc and the upper critical field Hc2 have been examined by resistance measurements. X‐ray diffractometry shows that for the modulation wavelength λ shorter than 3 nm both Mo and Si sublayers are amorphous, while for λ longer than 3 nm, crystalline bcc structures appear in Mo sublayers. The λ dependence of Tc of the multilayer films with equal sublayer thickness shows that Tc takes a maximum value of 6.1 K for λ=2.3 nm and approaches the Tc value of amorphous Mo56Si44 in the small λ limit. The superconductivity of the multilayers has been confirmed to result from amorphous MoSi phase formed in the interfacial region of the sublayers. The thickness of the superconducting amorphous layer is estimated to be about 3 nm from the λ dependence of Tc and from the result of the anisotropy of Hc2 . Keeping the Mo sublayer thickness less than 2.4 nm to suppress the appearance of the crystalline Mo and increasing the Si sublayer thickness to reduce the interlayer Josephson coupling, an ideal quasi‐two‐dimensional superconductor with dHc2∥ /dT as high as 180 kOe/K has been realized.

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