4.5 kV GTO turn-off failure analysis under an inductive load including snubber, gate circuit and various parasitics
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Simulation of wafer-scale GTO thyristors in circuitsIEEE Transactions on Power Electronics, 1991
- A study on GTO turn-off failure mechanism—A time- and temperature-dependent 1-D model analysisIEEE Transactions on Electron Devices, 1984
- One-dimensional analysis of turnoff phenomena for a gate turnoff thyristorIEEE Transactions on Electron Devices, 1979
- Gate turn-off in p-n-p-n devicesIEEE Transactions on Electron Devices, 1966