Magnetoresistance of silicon diodes reverse biased into breakdown
- 16 February 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 21 (2) , 605-616
- https://doi.org/10.1002/pssa.2210210225
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Magneto-resistance effect and the band structure of single crystal siliconPhysica, 1954