Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts
- 1 July 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (7) , 332-334
- https://doi.org/10.1109/55.772367
Abstract
Polysilicon thin-film transistors (TFTs) with island thickness of 20 and 70 nm were fabricated with self-aligned cobalt and nickel silicide contacts to the source and drain. The silicide contacts are shown to reduce the series resistance, which limits the on-current of the device, thus significantly increasing the effective mobility in the 20-nm island devices. The mobilities of 20-nm cobalt and nickel silicided devices are similar to those with 70-nm islands, 31 versus 33 cm/sup 2//V-s, whereas the nonsilicided 20-nm devices have a mobility of only 13 cm/sup 2//V-s. The island thickness is shown to influence other device parameters affecting active matrix display driver circuit design, such as threshold voltage, leakage current, and subthreshold swing; all these parameters are improved when the island thickness is decreased.Keywords
This publication has 6 references indexed in Scilit:
- High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilaneIEEE Transactions on Electron Devices, 1996
- Single crystal silicon thin film transistors fabricatedat low process temperatureson glass substratesElectronics Letters, 1996
- Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSIIEEE Transactions on Electron Devices, 1995
- Low Temperature Silicides for Poly-Silicon Thin Film Transistor ApplicationsMRS Proceedings, 1995
- High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon filmsIEEE Electron Device Letters, 1987
- Polycrystalline silicon thin-film transistors on a novel 800°C glass substrateIEEE Electron Device Letters, 1986