Single crystal silicon thin film transistors fabricatedat low process temperatureson glass substrates

11 April 1996

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 32 (8) , 775-777
https://doi.org/10.1049/el:19960474

Abstract

Thin film transistors were fabricated in single crystal silicon films bonded to glass substrates. High electron mobilities were achieved, making integration of the driving circuitry and pixel switching elements on the same glass substrate possible and allowing improved display aperture ratios. These single crystal silicon TFTS are attractive for AMLCD applications.

Keywords

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